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Journal Articles

Electronic properties of 6,13-Bis(triisopropylsilylethynyl)pentacene probed by inner-shell spectroscopy

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro

Molecular Crystals and Liquid Crystals, 622(1), p.50 - 54, 2015/12

BB2014-1633.pdf:0.39MB

 Times Cited Count:0 Percentile:0.01(Chemistry, Multidisciplinary)

Organic electrically conducting $$pi$$-stacked molecules are widely regarded as promising materials for future application of nanoelectronics. Direct measurements of electronic structures of unoccupied states in organic semiconductors lead to better understanding of mechanism of electron conduction. For probing unoccupied partial density of states (DOS), X-ray absorption spectroscopy (XAS) is commonly used, where selective excitation of the 1s core electron to the unoccupied conduction band is possible. However, XAS cannot distinguish localized and delocalized features without comparing any theoretical approach. In this work, the core-hole-clock method in resonant Auger spectroscopy (RAS) has been applied to probe electron delocalization through the empty conduction band in the attosecond domain for the purpose of exploring electronic materials with high-speed electron transport. We will discuss some organic molecules such as pentacenes.

Journal Articles

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Matsuura, Hideharu*; Kagamihara, So*; Ito, Yuji*; Oshima, Takeshi; Ito, Hisayoshi

Microelectronic Engineering, 83(1), p.17 - 19, 2006/01

 Times Cited Count:3 Percentile:24.42(Engineering, Electrical & Electronic)

no abstracts in English

Journal Articles

High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi

Journal of Applied Physics, 98(1), p.013530_1 - 013530_14, 2005/07

 Times Cited Count:45 Percentile:80.53(Physics, Applied)

no abstracts in English

Journal Articles

Post-implantation annealing effects on the surface morphology and electrical characteristics of 6H-SiC implanted with aluminum

Oi, Akihiko; Oshima, Takeshi; Yoshikawa, Masahito; Lee, K. K.; Iwami, Motohiro*; Ito, Hisayoshi

Materials Science Forum, 389-393, p.831 - 834, 2002/05

no abstracts in English

Journal Articles

Impact of lattice defects on the preformance degradation of Si photodiodes by high-temperature $$gamma$$ and electron irradiation

Oyama, Hidenori*; Hirao, Toshio; Simoen, E.*; Claeys, C.*; Onoda, Shinobu*; Takami, Yasukiyo*; Ito, Hisayoshi

Physica B; Condensed Matter, 308-310, p.1226 - 1229, 2001/12

 Times Cited Count:31 Percentile:79.64(Physics, Condensed Matter)

no abstracts in English

Journal Articles

Theoretical analysis on phototimulated luminescence phenomenon of imaging plate

Kishimoto, Maki; Nakamura, Tatsuya; To, Kentaro; Sakasai, Kaoru; Katagiri, Masaki; Takahashi, Hiroyuki*; Nakazawa, Masaharu*

Nihon Genshiryoku Gakkai-Shi, 43(2), p.168 - 181, 2001/02

 Times Cited Count:1 Percentile:11.99(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Fabrication of p-type SiC using aluminum/carbon co-implantation

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

Dai-11-Kai Ryushisen No Sentanteki Oyo Gijutsu Ni Kansuru Shimpojiumu (BEAMS 2000) Hobunshu, p.139 - 142, 2000/11

no abstracts in English

Journal Articles

Charge trapping mechanism of MNOS structure with $$gamma$$-ray irradiation

*; *; Takahashi, Yoshihiro*; Yoshikawa, Masahito; Onishi, Kazunori*

Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei, p.131 - 132, 1993/00

no abstracts in English

Journal Articles

Electrical conductivity of near-stoichiometric (U,Gd)O$$_{2}$$ solid solutions

; ; ;

Journal of Nuclear Materials, 150, p.233 - 237, 1987/00

 Times Cited Count:6 Percentile:55.64(Materials Science, Multidisciplinary)

no abstracts in English

JAEA Reports

Fabrication of HgI$$_{2}$$ Nuclear Radiation Detectors

*; ;

JAERI-M 8478, 133 Pages, 1979/10

JAERI-M-8478.pdf:9.04MB

no abstracts in English

Oral presentation

Electronic structures of sulfur-containing organic electronic materials probed by X-ray absorption spectroscopy

Ikeura, Hiromi*; Sekiguchi, Tetsuhiro

no journal, , 

Many peaks are observed in X-ray absorption fine structure near the inner-shall edges. Such fine structures are called near-edge X-rays absorption fine structure or abbreviated as NEXAFS. NEXAFS spectra provide us with information on property of electronic states concerning partial density of states of unoccupied conduction band for materials. In this work, we have investigated several sulfur-containing thiophene derivative polymers using NEXAFS spectroscopy. We have recorded the S K-edge NEXAFS spectra of film samples of these electronic materials and tried to interpret the origin of electronic transition seen in NEXAFS on the basis of molecular orbital theory. Furthermore, we discuss whether there is a potential relation between the observed spectra and charge-transfer property of the materials.

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